Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- RS Stock No.:
- 284-724
- Mfr. Part No.:
- IMT65R057M1HXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£12,518.00
(exc. VAT)
£15,022.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £6.259 | £12,518.00 |
*price indicative
- RS Stock No.:
- 284-724
- Mfr. Part No.:
- IMT65R057M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon CoolSiC MOSFET 650 V G1 showcases advanced silicon carbide technology, meticulously designed for high performance and reliability in demanding applications. Capitalising on over two decades of optimisation, this MOSFET delivers exceptional efficiency and ease of use, making it an ideal choice for various implementations, including solar inverters and electric vehicle charging systems. Its robust features ensure reliable operation in high temperature environments, paving the way for more compact and efficient power designs. Enhanced with a fast body diode and superior gate oxide reliability, this product stands out in its category, offering a unique balance of performance and user friendliness. Perfect for engineers striving for excellence within power supply circuits, this MOSFET embodies innovation and reliability, setting a new benchmark in the industry.
Optimised for high current switching
Enhanced avalanche capability for robustness
Compatible with standard drivers for flexibility
Kelvin source configuration reduces switching losses
High performance and reliability combined
Ideal for continuous hard commutation
Compact design enhances power density
Qualified for industrial applications per JEDEC standards
Enhanced avalanche capability for robustness
Compatible with standard drivers for flexibility
Kelvin source configuration reduces switching losses
High performance and reliability combined
Ideal for continuous hard commutation
Compact design enhances power density
Qualified for industrial applications per JEDEC standards
Related links
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon IMT SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1