Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

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Packaging Options:
RS Stock No.:
284-714
Mfr. Part No.:
IMT65R022M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon CoolSiC MOSFET 650 V G1 represents a significant advancement in power electronics, engineered with cutting edge silicon carbide technology to enhance performance and reliability. This innovative device boasts optimised switching characteristics, allowing for high efficiency in demanding applications. It excels in challenging environments, offering superior heat resistance and reliability beyond traditional silicon devices. Its versatility enables seamless integration into various systems, including telecommunications, renewable energy, and electric vehicle charging. Designed for exceptional thermal management, it ensures long term performance while reducing overall system footprint. The CoolSiC MOSFET stands as an ideal solution for modern power conversion, supporting efforts towards energy efficient and compact designs.

Optimised switching for system efficiency
Compatible with standard driver configurations
Effective in high temperature environments
Reduced switching losses with Kelvin source
Reliable fast body diode design
Supports hard commutation topologies
Improves efficiency and reduces costs
Qualified per JEDEC standards

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