Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- RS Stock No.:
- 284-714
- Mfr. Part No.:
- IMT65R022M1HXUMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 284-714
- Mfr. Part No.:
- IMT65R022M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 79 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 79 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC MOSFET 650 V G1 represents a significant advancement in power electronics, engineered with cutting edge silicon carbide technology to enhance performance and reliability. This innovative device boasts optimised switching characteristics, allowing for high efficiency in demanding applications. It excels in challenging environments, offering superior heat resistance and reliability beyond traditional silicon devices. Its versatility enables seamless integration into various systems, including telecommunications, renewable energy, and electric vehicle charging. Designed for exceptional thermal management, it ensures long term performance while reducing overall system footprint. The CoolSiC MOSFET stands as an ideal solution for modern power conversion, supporting efforts towards energy efficient and compact designs.
Optimised switching for system efficiency
Compatible with standard driver configurations
Effective in high temperature environments
Reduced switching losses with Kelvin source
Reliable fast body diode design
Supports hard commutation topologies
Improves efficiency and reduces costs
Qualified per JEDEC standards
Compatible with standard driver configurations
Effective in high temperature environments
Reduced switching losses with Kelvin source
Reliable fast body diode design
Supports hard commutation topologies
Improves efficiency and reduces costs
Qualified per JEDEC standards
Related links
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon IMT SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1