Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

RS Stock No.:: 284-730
Mfr. Part No.:: IMT65R083M1HXUMA1
Brand:: Infineon

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 59 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

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RS Stock No.:: 284-730
Mfr. Part No.:: IMT65R083M1HXUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC MOSFET 650 V G1
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	111mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	158W
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC MOSFET 650 V G1
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 111mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 158W
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IMT65R083M1HXUMA1

The Infineon 650 V CoolSiC MOSFET is engineered with cutting edge silicon carbide technology, offering unmatched efficiency and reliability for demanding applications. This next generation component is designed to optimise performance across various high temperature and challenging operating environments. Its innovative design, refined over 20 years, effortlessly combines high operational reliability with user friendly integration. The increase in power density and reduction in system size makes it an Ideal choice for applications such as solar inverters, electric vehicle charging infrastructure, and energy storage solutions, allowing for seamless implementation in power supply systems.

Optimised switching behaviour enhances efficiency

Robust body diode ensures reliable commutation

Designed for high temperature operations

Simplified integration into existing circuits

Exceptional thermal performance for demanding environments

Superior avalanche capability for system safety

Significant reduction in switching losses

Ideal for high power density applications