Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

RS Stock No.:: 284-718
Mfr. Part No.:: IMT65R039M1HXUMA1
Brand:: Infineon

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

Subtotal (1 reel of 2000 units)*

£16,574.00

(exc. VAT)

£19,888.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

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Units	Per unit	Per Reel*
2000 +	£8.287	£16,574.00

*price indicative

RS Stock No.:: 284-718
Mfr. Part No.:: IMT65R039M1HXUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	61A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	CoolSiC MOSFET 650 V G1
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	51mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	263W
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 61A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series CoolSiC MOSFET 650 V G1
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 51mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 263W
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMT65R039M1HXUMA1

The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the Advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.

Optimised switching enhances performance

Robust body diode ensures reliable commutation

Excellent thermal management extends lifetimes

Efficient operation at elevated temperatures

Seamless integration with standard drivers

Kelvin source reduces switching losses

Complies with JEDEC standards for reliability

Versatile for enhanced power density in designs