MPN

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

RS Stock No.:: 351-965
Mfr. Part No.:: IGT65R140D2ATMA1
Brand:: Infineon

Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£14.32

(exc. VAT)

£17.185

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£2.864	£14.32
50 - 95	£2.72	£13.60
100 +	£2.52	£12.60

*price indicative

RS Stock No.:: 351-965
Mfr. Part No.:: IGT65R140D2ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	IGT65
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.17Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.8nC
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Power Dissipation Pd	47W
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series IGT65
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.17Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.8nC
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Power Dissipation Pd 47W
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGT65R140D2ATMA1

COO (Country of Origin):: MY

The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.

Enhancement mode transistor

Ultra fast switching

No reverse recovery charge

Capable of reverse conduction

Low gate and output charge

Superior commutation ruggedness