Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

Subtotal (1 reel of 2000 units)*

£14,590.00

(exc. VAT)

£17,508.00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +£7.295£14,590.00

*price indicative

RS Stock No.:
284-721
Mfr. Part No.:
IMT65R048M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component

it embodies a commitment to performance and reliability, perfect for modern electronic solutions.

Optimised for high frequency applications
Robust thermal performance for harsh environments
Enhanced reliability for extended life
Low switching losses improve efficiency
Compact design reduces system footprint
Industry leading avalanche capability for fault tolerance
User friendly integration with standard drivers

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