Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

The Infineon CoolSiC MOSFET 650 V G1 is engineered for the modern demands of high performance applications, offering a robust solution in a compact package. Designed with cutting edge solid silicon carbide technology, this semiconductor device combines exceptional reliability and efficiency, making it ideal for a broad range of applications such as solar inverters, electric vehicle charging infrastructure, and uninterruptible power supplies. With a focus on simplicity and cost effectiveness, it enhances system performance while ensuring superior thermal stability for challenging environments. This device guarantees not just performance but also a seamless integration into various designs, redefining what’s possible in power management.

Optimised switching enhances operational efficiency
Robust body diode supports advanced applications
Exceptional thermal performance in extreme conditions
Kelvin source reduces switching losses
High avalanche capability for system durability
Compatible with standard drivers for easy integration
Compact design increases power density