Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- RS Stock No.:
- 284-732
- Mfr. Part No.:
- IMT65R083M1HXUMA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 284-732
- Mfr. Part No.:
- IMT65R083M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon 650 V CoolSiC MOSFET is engineered with cutting edge silicon carbide technology, offering unmatched efficiency and reliability for demanding applications. This next generation component is designed to optimise performance across various high temperature and challenging operating environments. Its innovative design, refined over 20 years, effortlessly combines high operational reliability with user friendly integration. The increase in power density and reduction in system size makes it an ideal choice for applications such as solar inverters, electric vehicle charging infrastructure, and energy storage solutions, allowing for seamless implementation in power supply systems.
Optimised switching behaviour enhances efficiency
Robust body diode ensures reliable commutation
Designed for high temperature operations
Simplified integration into existing circuits
Exceptional thermal performance for demanding environments
Superior avalanche capability for system safety
Significant reduction in switching losses
Ideal for high power density applications
Robust body diode ensures reliable commutation
Designed for high temperature operations
Simplified integration into existing circuits
Exceptional thermal performance for demanding environments
Superior avalanche capability for system safety
Significant reduction in switching losses
Ideal for high power density applications
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