Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 23 A, 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1
- RS Stock No.:
- 284-910
- Mfr. Part No.:
- IPT65R125CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-910
- Mfr. Part No.:
- IPT65R125CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 23 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a cutting edge MOSFET designed to elevate power efficiency in demanding applications. This device features industry leading switching performance, encapsulated in the PG HSOF 8 package, optimising thermal management and maximising operational reliability. With a remarkable breakdown voltage of 650V, it is engineered to handle high power density and is an essential component for resonant switching topologies, such as LLC and phase shift full bridge converters. It not only meets the rigorous standards for efficiency and reliability but also supports designs that require increased power margins and enhanced performance across a range of operating temperatures.
Ultra fast body diode enhances performance
Reduces switching losses for energy efficiency
Excellent ruggedness for demanding applications
Supports increased bus voltage for safety
Outstanding light load efficiency for industrial use
Reduces switching losses for energy efficiency
Excellent ruggedness for demanding applications
Supports increased bus voltage for safety
Outstanding light load efficiency for industrial use
Related links
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R080CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R190CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R155CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R099CFD7XTMA1
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1