Name: Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 43 A, 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1
Brand: Infineon
SKU: 284-903
Price: 6.36 GBP
Availability: Discontinued

The Infineon MOSFET is highly efficient power device boasts cutting edge technology designed for demanding applications. The latest iteration of the 650V CoolMOS CFD7 features exceptional switching performance coupled with outstanding thermal behaviour, making it the ideal choice for resonant switching topologies like LLC and phase shift full bridge. As a successor to the CoolMOS CFD2, it promises superior efficiency and reliability in industrial applications ranging from servers to EV charging solutions. This device empowers engineers to push the boundaries of power density and thermal management in their designs, ensuring robust performance even under high temperature conditions.

Ultra fast body diode enhances efficiency
Optimised for high power density
Best in class RDS(on) minimises loss
Consistent performance across temperatures
Exceptional light load efficiency
Increased safety margins for high voltage
Fully JEDEC qualified

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	43 A
	Maximum Drain Source Voltage	650 V
	Package Type	PG-HSOF-8
	Series	650V CoolMOS CFD7 SJ Power Device
	Mounting Type	Surface Mount
	Pin Count	8
	Channel Mode	Enhancement
	Number of Elements per Chip	1
	Transistor Material	SiC

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 43 A
	Maximum Drain Source Voltage 650 V
	Package Type PG-HSOF-8
	Series 650V CoolMOS CFD7 SJ Power Device
	Mounting Type Surface Mount
	Pin Count 8
	Channel Mode Enhancement
	Number of Elements per Chip 1
	Transistor Material SiC

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 43 A, 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1

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