Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 16 A, 650 V, 8-Pin PG-HSOF-8 IPT65R190CFD7XTMA1
- RS Stock No.:
- 284-916
- Mfr. Part No.:
- IPT65R190CFD7XTMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 284-916
- Mfr. Part No.:
- IPT65R190CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features an advanced 650V CoolMOS CFD7 power device brings forth unparalleled efficiency and thermal performance for applications in resonant switching topologies. Designed as a flagship within the CFD7 series, it promises enhanced switching characteristics, making it the ideal solution for demanding environments such as server, telecom, and EV charging applications. With its innovative ultra fast body diode and superior hard commutation robustness, this device transcends traditional MOSFET functionality, enabling a significant boost in power density and reliability. Its advanced design accentuates the thermal management capabilities required for high performance systems.
Ultra fast body diode improves critical performance
Best in class on state resistance reduces energy loss
Tailored for high power density boosting efficiency
Optimised for phase shift full bridge designs
Meets safety standards for reliable operation
Fully qualified to JEDEC standards for quality
Best in class on state resistance reduces energy loss
Tailored for high power density boosting efficiency
Optimised for phase shift full bridge designs
Meets safety standards for reliable operation
Fully qualified to JEDEC standards for quality
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