Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 23 A, 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1

The Infineon MOSFET is a cutting edge MOSFET designed to elevate power efficiency in demanding applications. This device features industry leading switching performance, encapsulated in the PG HSOF 8 package, optimising thermal management and maximising operational reliability. With a remarkable breakdown voltage of 650V, it is engineered to handle high power density and is an essential component for resonant switching topologies, such as LLC and phase shift full bridge converters. It not only meets the rigorous standards for efficiency and reliability but also supports designs that require increased power margins and enhanced performance across a range of operating temperatures.

Ultra fast body diode enhances performance
Reduces switching losses for energy efficiency
Excellent ruggedness for demanding applications
Supports increased bus voltage for safety
Outstanding light load efficiency for industrial use