Infineon BFR460L3E6327XTMA1 RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1
- RS Stock No.:
- 261-3958
- Distrelec Article No.:
- 304-41-647
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)*
£14.30
(exc. VAT)
£17.15
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 27,900 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | £0.286 | £14.30 |
| 100 - 100 | £0.258 | £12.90 |
| 150 - 200 | £0.232 | £11.60 |
| 250 - 450 | £0.208 | £10.40 |
| 500 + | £0.188 | £9.40 |
*price indicative
- RS Stock No.:
- 261-3958
- Distrelec Article No.:
- 304-41-647
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Transition Frequency ft | 22GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 1mm | |
| Series | BFR | |
| Height | 0.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Transition Frequency ft 22GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 1mm | ||
Series BFR | ||
Height 0.4mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
Related links
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