Infineon RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1

Bulk discount available

Subtotal (1 reel of 3000 units)*

£282.00

(exc. VAT)

£339.00

(inc. VAT)

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Last RS stock
  • Final 6,000 unit(s), ready to ship

Units
Per unit
Per Reel*
3000 - 3000£0.094£282.00
6000 - 6000£0.085£255.00
9000 +£0.076£228.00

*price indicative

RS Stock No.:
261-3953
Mfr. Part No.:
BFR360FH6765XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

15V

Package Type

TSFP-3-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

15V

Maximum Transition Frequency ft

14GHz

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

210mW

Minimum DC Current Gain hFE

90

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

3

Series

BFR

Standards/Approvals

RoHS

Height

0.55mm

Length

1.2mm

Automotive Standard

No

The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.

Low noise amplifiers for FM and AM radio

Minimum noise figure

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