Infineon BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V SOT-343
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£393.00
(exc. VAT)
£471.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 May 2026
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Units | Per unit | Per Reel* |
---|---|---|
3000 - 3000 | £0.131 | £393.00 |
6000 - 6000 | £0.124 | £372.00 |
9000 + | £0.117 | £351.00 |
*price indicative
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Transistor Type | NPN | |
Maximum DC Collector Current | 35 mA | |
Maximum Collector Emitter Voltage | 2.25 V | |
Package Type | SOT-343 | |
Mounting Type | Surface Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 35 mA | ||
Maximum Collector Emitter Voltage 2.25 V | ||
Package Type SOT-343 | ||
Mounting Type Surface Mount | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
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