Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343

View all Bipolar Transistors
Bulk discount available

Subtotal (1 reel of 3000 units)*

£393.00

(exc. VAT)

£471.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 07 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 3000£0.131£393.00
6000 - 6000£0.124£372.00
9000 +£0.117£351.00

*price indicative

RS Stock No.:
259-1453
Mfr. Part No.:
BFP840ESDH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

2.25V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

2.9V

Maximum Power Dissipation Pd

75mW

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

150

Maximum Transition Frequency ft

80GHz

Pin Count

4

Maximum Operating Temperature

150°C

Width

2.1 mm

Standards/Approvals

RoHS

Series

BFP

Length

2mm

Height

0.9mm

Automotive Standard

No

The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).

High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA

OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA

IC max +35mA

Related links