Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£465.00
(exc. VAT)
£558.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 24 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.155 | £465.00 |
| 6000 - 6000 | £0.147 | £441.00 |
| 9000 + | £0.144 | £432.00 |
*price indicative
- RS Stock No.:
- 259-1453
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Transition Frequency ft | 80GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Transition Frequency ft 80GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
Related links
- Infineon BFP840ESDH6327XTSA1 RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon Broadband RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon BFR840L3RHESDE6327XTSA1 RF Bipolar Transistor 2.25 V, 3-Pin TSLP-3-9
- Infineon BFP840FESDH6327XTSA1 Transistor 2.25 V, 4-Pin TSFP
- Infineon Transistor 2.25 V, 4-Pin TSFP
- Infineon BFP843FH6327XTSA1 Bipolar Transistor 2.25 V, 4-Pin TSFP-4-1