Infineon BFP193WH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 20 V, 4-Pin SOT-343

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£2.025

(exc. VAT)

£2.425

(inc. VAT)

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25 - 225£0.081£2.03
250 - 600£0.079£1.98
625 - 1225£0.077£1.93
1250 - 2475£0.075£1.88
2500 +£0.073£1.83

*price indicative

Packaging Options:
RS Stock No.:
259-1415
Distrelec Article No.:
304-40-482
Mfr. Part No.:
BFP193WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

8GHz

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

580mW

Pin Count

4

Maximum Operating Temperature

150°C

Length

2.1mm

Width

2 mm

Series

BFP193W

Standards/Approvals

RoHS

Height

0.9mm

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is used for various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

Pb-free (RoHS compliant) package

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