Infineon BFP540ESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

£11.35

(exc. VAT)

£13.625

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 100£0.454£11.35
125 - 225£0.431£10.78
250 - 600£0.413£10.33
625 - 1225£0.295£7.38
1250 +£0.204£5.10

*price indicative

Packaging Options:
RS Stock No.:
259-1432
Mfr. Part No.:
BFP540ESDH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

80mA

Maximum Collector Emitter Voltage Vceo

10V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

10V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250mW

Minimum DC Current Gain hFE

50

Maximum Emitter Base Voltage VEBO

1V

Transistor Polarity

NPN

Maximum Transition Frequency ft

30GHz

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFP540

Height

0.9mm

Standards/Approvals

RoHS

Length

2mm

Automotive Standard

No

The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value 1000 V (HBM).

Outstanding Gms 21.5 dB

Noise figure F 0.9 dB

Gold metallization for high reliability

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