Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor, 55 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 216-8355
- Mfr. Part No.:
- BFP843H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£366.00
(exc. VAT)
£438.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.122 | £366.00 |
| 6000 - 6000 | £0.117 | £351.00 |
| 9000 + | £0.114 | £342.00 |
*price indicative
- RS Stock No.:
- 216-8355
- Mfr. Part No.:
- BFP843H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Broadband RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 55mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Power Dissipation Pd | 125mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP843 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Broadband RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 55mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Power Dissipation Pd 125mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP843 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon BFP series is a robust low noise broadband pre-matched RF heterojunction bipolar transistor. It is suitable for low voltage applications like wireless communications, satellite communication systems and navigation systems.
High transition frequency enables best in class noise performance at high frequencies
Unique combination of high end RF performance and robustness
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