Infineon BFP843H6327XTSA1 Broadband RF Bipolar Transistor, 55 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 216-8356
- Mfr. Part No.:
- BFP843H6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£7.80
(exc. VAT)
£9.35
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,950 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | £0.156 | £7.80 |
*price indicative
- RS Stock No.:
- 216-8356
- Mfr. Part No.:
- BFP843H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Broadband RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 55mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Maximum Power Dissipation Pd | 125mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP843 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Broadband RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 55mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Maximum Power Dissipation Pd 125mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP843 | ||
Automotive Standard No | ||
The Infineon BFP series is a robust low noise broadband pre-matched RF heterojunction bipolar transistor. It is suitable for low voltage applications like wireless communications, satellite communication systems and navigation systems.
High transition frequency enables best in class noise performance at high frequencies
Unique combination of high end RF performance and robustness
Related links
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