Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9

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Subtotal (1 reel of 15000 units)*

£2,565.00

(exc. VAT)

£3,075.00

(inc. VAT)

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  • 15,000 unit(s) shipping from 27 November 2025
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Per unit
Per Reel*
15000 +£0.171£2,565.00

*price indicative

RS Stock No.:
258-0649
Mfr. Part No.:
BFR840L3RHESDE6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSLP-3-9

Mounting Type

Surface Mount

The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.

Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package


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