Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 3-Pin TSLP-3-9

Subtotal (1 reel of 15000 units)*

£4,155.00

(exc. VAT)

£4,980.00

(inc. VAT)

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  • 15,000 unit(s) shipping from 30 September 2026
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Units
Per unit
Per Reel*
15000 +£0.277£4,155.00

*price indicative

RS Stock No.:
258-0649
Mfr. Part No.:
BFR840L3RHESDE6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

2.25V

Package Type

TSLP-3-9

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

2.9V

Minimum DC Current Gain hFE

150

Transistor Polarity

NPN

Maximum Power Dissipation Pd

75mW

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

75GHz

Maximum Operating Temperature

150°C

Pin Count

3

Height

0.31mm

Length

1mm

Standards/Approvals

RoHS

Series

BFR840L3RHESD

Automotive Standard

No

The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.

Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V

Low profile and small form factor leadless package

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