Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9
- RS Stock No.:
- 258-0649
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 15000 units)*
£2,565.00
(exc. VAT)
£3,075.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 15000 + | £0.171 | £2,565.00 |
*price indicative
- RS Stock No.:
- 258-0649
- Mfr. Part No.:
- BFR840L3RHESDE6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 35 mA | |
| Maximum Collector Emitter Voltage | 2.25 V | |
| Package Type | TSLP-3-9 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 35 mA | ||
Maximum Collector Emitter Voltage 2.25 V | ||
Package Type TSLP-3-9 | ||
Mounting Type Surface Mount | ||
The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package
Low profile and small form factor leadless package
Related links
- Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor 2.25 V TSLP-3-9
- Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V, 4-Pin TSFP
- Infineon BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V SOT-343
- Infineon BFR740L3RHE6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin TSLP-3-9
- Infineon BFP843H6327XTSA1 NPN RF Bipolar Transistor 2.25 V, 4-Pin SOT-343
- Infineon BFR360L3E6765XTMA1 RF Bipolar Transistor 15 V, 3-Pin TSLP-3-1
- Infineon BFR360FH6765XTSA1 NPN RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1
- Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor 6 V, 3-Pin TSFP