Infineon RF Bipolar Transistor, 50 mA NPN, 15 V, 3-Pin TSLP-3-1

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Subtotal (1 reel of 15000 units)*

£4,245.00

(exc. VAT)

£5,100.00

(inc. VAT)

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Units
Per unit
Per Reel*
15000 - 15000£0.283£4,245.00
30000 - 30000£0.255£3,825.00
45000 +£0.23£3,450.00

*price indicative

RS Stock No.:
261-3957
Mfr. Part No.:
BFR460L3E6327XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

15V

Package Type

TSLP-3-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

15V

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

22GHz

Maximum Emitter Base Voltage VEBO

1.5V

Maximum Power Dissipation Pd

200mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

90

Maximum Operating Temperature

150°C

Pin Count

3

Height

0.4mm

Standards/Approvals

RoHS

Series

BFR

Length

1mm

Automotive Standard

No

The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.

High ESD performance

High gain with minimum noise figure

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