Infineon BFR460L3E6327XTMA1 NPN RF Bipolar Transistor, 50 mA, 15 V, 3-Pin TSLP-3-1
- RS Stock No.:
- 261-3957
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 15000 units)*
£1,980.00
(exc. VAT)
£2,370.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
15000 - 15000 | £0.132 | £1,980.00 |
30000 - 30000 | £0.119 | £1,785.00 |
45000 + | £0.107 | £1,605.00 |
*price indicative
- RS Stock No.:
- 261-3957
- Mfr. Part No.:
- BFR460L3E6327XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Transistor Type | NPN | |
Maximum DC Collector Current | 50 mA | |
Maximum Collector Emitter Voltage | 15 V | |
Package Type | TSLP-3-1 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 50 mA | ||
Maximum Collector Emitter Voltage 15 V | ||
Package Type TSLP-3-1 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon low profile silicon NPN RF bipolar transistor with low noise device based on a grounded emitter. Its transition frequency of 22 GHz, low current and low voltage characteristics make the device suitable for amplifiers. It remains cost competitive without compromising on ease of use.
High ESD performance
High gain with minimum noise figure
High gain with minimum noise figure
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