Infineon RF Bipolar Transistor, 20 mA NPN, 15 V, 3-Pin TSFP-3-1

Bulk discount available

Subtotal (1 reel of 3000 units)*

£321.00

(exc. VAT)

£384.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Reel*
3000 - 3000£0.107£321.00
6000 - 6000£0.096£288.00
9000 +£0.087£261.00

*price indicative

RS Stock No.:
261-3950
Mfr. Part No.:
BFR340FH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

20mA

Maximum Collector Emitter Voltage Vceo

15V

Package Type

TSFP-3-1

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

15V

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

90

Transistor Polarity

NPN

Maximum Power Dissipation Pd

75mW

Maximum Transition Frequency ft

14GHz

Pin Count

3

Maximum Operating Temperature

110°C

Length

1.2mm

Height

0.55mm

Series

BFR

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.

Low noise amplifiers for FM and AM radio

Minimum noise figure

Related links