Infineon BFP740H6327XTSA1 NPN RF Bipolar Transistor, 45 mA, 4.2 V TSFP-4-1

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Subtotal (1 reel of 3000 units)*

£372.00

(exc. VAT)

£447.00

(inc. VAT)

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  • 999,999,000 unit(s) shipping from 07 May 2026
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Units
Per unit
Per Reel*
3000 +£0.124£372.00

*price indicative

RS Stock No.:
259-1451
Mfr. Part No.:
BFP740H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

45 mA

Maximum Collector Emitter Voltage

4.2 V

Package Type

TSFP-4-1

Mounting Type

Surface Mount

The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.

NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package

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