- RS Stock No.:
- 259-1451
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 11/12/2024
Added
Price Each (On a Reel of 3000)
£0.142
(exc. VAT)
£0.17
(inc. VAT)
Units | Per unit | Per Reel* |
3000 - 3000 | £0.142 | £426.00 |
6000 - 6000 | £0.135 | £405.00 |
9000 + | £0.126 | £378.00 |
*price indicative |
- RS Stock No.:
- 259-1451
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.
NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package
Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 45 mA |
Maximum Collector Emitter Voltage | 4.2 V |
Package Type | TSFP-4-1 |
Mounting Type | Surface Mount |
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