Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1451
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£372.00
(exc. VAT)
£447.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.124 | £372.00 |
*price indicative
- RS Stock No.:
- 259-1451
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Power Dissipation Pd | 44mW | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 47GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP | |
| Length | 2mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Power Dissipation Pd 44mW | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 47GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP | ||
Length 2mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.
NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package
Related links
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