Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

£10.825

(exc. VAT)

£13.00

(inc. VAT)

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  • 850 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 25£0.433£10.83
50 - 75£0.424£10.60
100 - 225£0.397£9.93
250 - 975£0.366£9.15
1000 +£0.359£8.98

*price indicative

RS Stock No.:
273-7301
Mfr. Part No.:
BFP740ESDH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

4.2V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Npn Rf Heterojunction Bipolar Transistor (Hbt)

Maximum Collector Base Voltage VCBO

4.9V

Transistor Polarity

NPN

Minimum DC Current Gain hFE

160

Maximum Power Dissipation Pd

160mW

Maximum Transition Frequency ft

45GHz

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

0.5V

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP740ESD

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.

High gain

Robustness

High end RF performance

Suitable for wireless communications

Suitable for satellite communication systems

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