Infineon BFP740H6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1452
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 259-1452
- Mfr. Part No.:
- BFP740H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 44mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 47GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 44mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 47GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Length 2mm | ||
Width 1.25 mm | ||
Automotive Standard No | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) with an integrated ESD protection. It is unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits.
NFmin 0.6 dB at 2.4 GHz and 0.8 dB at 5.5 GHz, 3V, 6 mA
High gain Gms 26 dB at 2.4 GHz and Gma 20.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 23.5 dBm at 5.5 GHz, 25 mA
Low profile and small form factor leadless package
Related links
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