Infineon BFP520H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin TSFP-4-1

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Subtotal (1 pack of 25 units)*

£5.825

(exc. VAT)

£7.00

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225£0.233£5.83
250 - 600£0.16£4.00
625 - 1225£0.149£3.73
1250 - 2475£0.14£3.50
2500 +£0.106£2.65

*price indicative

Packaging Options:
RS Stock No.:
259-1430
Distrelec Article No.:
304-40-487
Mfr. Part No.:
BFP520H6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

50mA

Maximum Collector Emitter Voltage Vceo

10V

Package Type

TSFP-4-1

Mount Type

Surface

Transistor Configuration

Common Emitter

Maximum Collector Base Voltage VCBO

10V

Maximum Power Dissipation Pd

120mW

Maximum Transition Frequency ft

45GHz

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

1V

Transistor Polarity

NPN

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP520F

Height

0.9mm

Standards/Approvals

RoHS

Length

2mm

Automotive Standard

No

The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

fT 8 GHz, NFmin 1 dB at 900 MHz

Pb-free (RoHS compliant) package

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