Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343

Subtotal (1 reel of 3000 units)*

£630.00

(exc. VAT)

£750.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.21£630.00

*price indicative

RS Stock No.:
273-7299
Mfr. Part No.:
BFP740ESDH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

45mA

Maximum Collector Emitter Voltage Vceo

4.2V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Npn Rf Heterojunction Bipolar Transistor (Hbt)

Maximum Collector Base Voltage VCBO

4.9V

Maximum Emitter Base Voltage VEBO

0.5V

Minimum DC Current Gain hFE

160

Transistor Polarity

NPN

Maximum Power Dissipation Pd

160mW

Maximum Transition Frequency ft

45GHz

Minimum Operating Temperature

-55°C

Pin Count

4

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Series

BFP740ESD

Automotive Standard

No

The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.

High gain

Robustness

High end RF performance

Suitable for wireless communications

Suitable for satellite communication systems

Related links