Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343

Bulk discount available

Subtotal (1 reel of 3000 units)*

£264.00

(exc. VAT)

£318.00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Reel*
3000 - 3000£0.088£264.00
6000 - 12000£0.084£252.00
15000 +£0.08£240.00

*price indicative

RS Stock No.:
259-1416
Mfr. Part No.:
BFP196WH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Transistor Polarity

NPN

Maximum Power Dissipation Pd

700mW

Minimum DC Current Gain hFE

70

Maximum Transition Frequency ft

7.5GHz

Maximum Emitter Base Voltage VEBO

2V

Minimum Operating Temperature

-60°C

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP196W

Length

2.1mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.

Power amplifier for DECT and PCN systems

Pb-free (RoHS compliant) package

Related links