Infineon BFP183WH6327XTSA1 RF Bipolar Transistor, 65 mA NPN, 20 V, 4-Pin SOT-343

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Subtotal (1 pack of 25 units)*

£5.90

(exc. VAT)

£7.075

(inc. VAT)

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25 - 25£0.236£5.90
50 - 75£0.231£5.78
100 - 225£0.131£3.28
250 - 975£0.128£3.20
1000 +£0.098£2.45

*price indicative

RS Stock No.:
273-7296
Mfr. Part No.:
BFP183WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-343

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Maximum Power Dissipation Pd

450mW

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFP183W

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Silicon RF Transistor designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This silicon RF transistor has qualification report according to AEC Q101.

Halogen free

Pb free package

RoHS compliant

Available with visible leads

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