Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343

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£8.40

(exc. VAT)

£10.10

(inc. VAT)

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Packaging Options:
RS Stock No.:
216-8347
Mfr. Part No.:
BFP196WNH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

150mA

Maximum Collector Emitter Voltage Vceo

12V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

Npn Silicon Planar Epitaxial Transistor

Maximum Collector Base Voltage VCBO

20V

Maximum Transition Frequency ft

7.5GHz

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

2V

Maximum Power Dissipation Pd

700mW

Minimum DC Current Gain hFE

70

Transistor Polarity

NPN

Maximum Operating Temperature

150°C

Pin Count

4

Series

BFP196WN

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Distrelec Product Id

304-39-392

The Infineon NPN silicon Planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from long-term experience in RF components and combines ease-of-use to stable volumes production, at Benchmark quality and reliability.

Pb-free

Halogen-free

Transition frequency of 7.5 GHz

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