Infineon RF Bipolar Transistor, 60 mA NPN, 4.5 V, 4-Pin TSFP-4-1
- RS Stock No.:
- 259-1424
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 259-1424
- Mfr. Part No.:
- BFP420FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 60mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 25GHz | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 60 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Series | BFP420F | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 60mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 25GHz | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 60 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Series BFP420F | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon low noise high gain silicon bipolar RF transistor is based on Infineon's reliable very high volume 25 GHz silicon bipolar technology.
Popular in discrete oscillators
Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
Green package with visible leads
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