Infineon BFR360FH6765XTSA1 RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS Stock No.:
- 261-3954
- Distrelec Article No.:
- 304-41-646
- Mfr. Part No.:
- BFR360FH6765XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£2.25
(exc. VAT)
£2.70
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 8,800 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | £0.045 | £2.25 |
*price indicative
- RS Stock No.:
- 261-3954
- Distrelec Article No.:
- 304-41-646
- Mfr. Part No.:
- BFR360FH6765XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 90 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.2mm | |
| Standards/Approvals | RoHS | |
| Series | BFR | |
| Height | 0.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 90 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 1.2mm | ||
Standards/Approvals RoHS | ||
Series BFR | ||
Height 0.55mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
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