Infineon BFR340FH6327XTSA1 RF Bipolar Transistor, 20 mA NPN, 15 V, 3-Pin TSFP-3-1
- RS Stock No.:
- 261-3952
- Distrelec Article No.:
- 304-41-645
- Mfr. Part No.:
- BFR340FH6327XTSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
£6.70
(exc. VAT)
£8.05
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 11 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | £0.134 | £6.70 |
| 100 - 100 | £0.121 | £6.05 |
| 150 - 200 | £0.109 | £5.45 |
| 250 - 450 | £0.098 | £4.90 |
| 500 + | £0.088 | £4.40 |
*price indicative
- RS Stock No.:
- 261-3952
- Distrelec Article No.:
- 304-41-645
- Mfr. Part No.:
- BFR340FH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 90 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Maximum Transition Frequency ft | 14GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 110°C | |
| Standards/Approvals | RoHS | |
| Length | 1.2mm | |
| Series | BFR | |
| Height | 0.55mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 90 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Maximum Transition Frequency ft 14GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 110°C | ||
Standards/Approvals RoHS | ||
Length 1.2mm | ||
Series BFR | ||
Height 0.55mm | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and high breakdown voltage characteristics make the device suitable for oscillators applications for frequencies as high as 3.5 GHz. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
Related links
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