Infineon RF Bipolar Transistor, 35 mA, 15 V, 3-Pin TSLP-3-1
- RS Stock No.:
- 261-3955
- Mfr. Part No.:
- BFR360L3E6765XTMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 15000 units)*
£2,280.00
(exc. VAT)
£2,730.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 29 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 15000 - 15000 | £0.152 | £2,280.00 |
| 30000 - 30000 | £0.137 | £2,055.00 |
| 45000 + | £0.123 | £1,845.00 |
*price indicative
- RS Stock No.:
- 261-3955
- Mfr. Part No.:
- BFR360L3E6765XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSLP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Transition Frequency ft | 14GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 90 | |
| Maximum Power Dissipation Pd | 210mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | BFR | |
| Width | 0.6mm | |
| Standards/Approvals | RoHS | |
| Length | 1mm | |
| Height | 0.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSLP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Transition Frequency ft 14GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 90 | ||
Maximum Power Dissipation Pd 210mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series BFR | ||
Width 0.6mm | ||
Standards/Approvals RoHS | ||
Length 1mm | ||
Height 0.4mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon low noise silicon bipolar RF transistor with low voltage and low current operation. That Device is having electrostatic discharge sensitive device. It is Pb-free RoHS compliant and halogen-free thin small leadless package.
For low noise amplifiers
Qualification report according to AEC-Q101 available
Related links
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