Infineon BFR182WH6327XTSA1 RF Bipolar Transistor, 35 mA, 20 V, 3-Pin SOT-323

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Subtotal (1 pack of 25 units)*

£3.425

(exc. VAT)

£4.10

(inc. VAT)

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Per Pack*
25 - 25£0.137£3.43
50 - 75£0.134£3.35
100 - 225£0.131£3.28
250 - 975£0.129£3.23
1000 +£0.055£1.38

*price indicative

RS Stock No.:
273-7305
Mfr. Part No.:
BFR182WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Maximum Transition Frequency ft

8GHz

Maximum Power Dissipation Pd

250mW

Minimum DC Current Gain hFE

70

Minimum Operating Temperature

-65°C

Pin Count

3

Maximum Operating Temperature

150°C

Series

BFR182W

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This RF transistor has qualification report according to AEC Q101.

Easy to use

Halogen free

Pb free package

RoHS compliant

With visible leads

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