Infineon BFR182WH6327XTSA1 RF Bipolar Transistor, 35 mA, 20 V, 3-Pin SOT-323

Subtotal (1 reel of 3000 units)*

£366.00

(exc. VAT)

£438.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.122£366.00

*price indicative

RS Stock No.:
273-7304
Mfr. Part No.:
BFR182WH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

35mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-323

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

2V

Maximum Power Dissipation Pd

250mW

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-65°C

Minimum DC Current Gain hFE

70

Maximum Operating Temperature

150°C

Pin Count

3

Series

BFR182W

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. This RF transistor has qualification report according to AEC Q101.

Easy to use

Halogen free

Pb free package

RoHS compliant

With visible leads

Related links