Infineon BFR181WH6327XTSA1 RF Bipolar Transistor, 20 mA, 20 V, 3-Pin SOT-323
- RS Stock No.:
- 273-7303
- Mfr. Part No.:
- BFR181WH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£2.50
(exc. VAT)
£3.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,725 unit(s) shipping from 04 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.10 | £2.50 |
| 50 - 75 | £0.098 | £2.45 |
| 100 - 225 | £0.096 | £2.40 |
| 250 - 975 | £0.094 | £2.35 |
| 1000 + | £0.04 | £1.00 |
*price indicative
- RS Stock No.:
- 273-7303
- Mfr. Part No.:
- BFR181WH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 175mW | |
| Minimum DC Current Gain hFE | 70 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Maximum Transition Frequency ft | 8GHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFR181W | |
| Standards/Approvals | Pb-Free (RoHS) | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 175mW | ||
Minimum DC Current Gain hFE 70 | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Maximum Transition Frequency ft 8GHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series BFR181W | ||
Standards/Approvals Pb-Free (RoHS) | ||
Automotive Standard AEC-Q101 | ||
The Infineon Silicon Bipolar RF Transistor is designed for low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This RF transistor has qualification report according to AEC Q101.
Easy to use
Halogen free
Pb free package
RoHS compliant
With visible leads
Related links
- Infineon BFR181WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon BFS481H6327XTSA1 RF Bipolar Transistor 20 V, 6-Pin SOT-363
- Infineon BFR93AWH6327XTSA1 Low Noise Silicon Bipolar RF Transistor 20 V, 3-Pin SOT-323
- Infineon BFP181E7764HTSA1 NPN Bipolar Transistor 20 V SOT-143
- Infineon BFR181E6327HTSA1 NPN Bipolar Transistor 20 V SOT-23
- Infineon BFR182WH6327XTSA1 RF Bipolar Transistor 20 V, 3-Pin SOT-323
- Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor 20 V SOT-323
- Infineon BFR340FH6327XTSA1 NPN RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1