Infineon BFP840ESDH6327XTSA1 RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS Stock No.:
- 259-1454
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
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£5.15
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£6.175
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- 2,700 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | £0.206 | £5.15 |
| 125 - 225 | £0.16 | £4.00 |
| 250 - 600 | £0.155 | £3.88 |
| 625 - 1225 | £0.151 | £3.78 |
| 1250 + | £0.148 | £3.70 |
*price indicative
- RS Stock No.:
- 259-1454
- Mfr. Part No.:
- BFP840ESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Transition Frequency ft | 80GHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 75mW | |
| Minimum DC Current Gain hFE | 150 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Length | 2mm | |
| Series | BFP | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Transition Frequency ft 80GHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 75mW | ||
Minimum DC Current Gain hFE 150 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Length 2mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
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