Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V TSLP-3-9

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Subtotal (1 pack of 10 units)*

£2.65

(exc. VAT)

£3.18

(inc. VAT)

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Per Pack*
10 - 90£0.265£2.65
100 - 240£0.251£2.51
250 - 490£0.241£2.41
500 - 990£0.231£2.31
1000 +£0.215£2.15

*price indicative

Packaging Options:
RS Stock No.:
258-0650
Mfr. Part No.:
BFR840L3RHESDE6327XTSA1
Brand:
Infineon
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Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSLP-3-9

Mounting Type

Surface Mount

The Infineon SiGe C NPN RF bipolar transistor is a discrete RF heterojunction bipolar transistor with an integrated ESD protection suitable for 5 GHz band applications.

Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
Low profile and small form factor leadless package


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