Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP
- RS Stock No.:
- 170-2364
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.296 | £5.92 |
| 100 - 180 | £0.282 | £5.64 |
| 200 - 480 | £0.253 | £5.06 |
| 500 - 980 | £0.228 | £4.56 |
| 1000 + | £0.217 | £4.34 |
*price indicative
- RS Stock No.:
- 170-2364
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 35 mA | |
| Maximum Collector Emitter Voltage | 2.25 V | |
| Package Type | TSFP | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 75 mW | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 2.9 V | |
| Maximum Operating Frequency | 85 GHz | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 1.4 x 0.8 x 0.55mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Transistor Type NPN | ||
Maximum DC Collector Current 35 mA | ||
Maximum Collector Emitter Voltage 2.25 V | ||
Package Type TSFP | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 75 mW | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 2.9 V | ||
Maximum Operating Frequency 85 GHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Dimensions 1.4 x 0.8 x 0.55mm | ||
Maximum Operating Temperature +150 °C | ||
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.
Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
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