Infineon Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP
- RS Stock No.:
- 170-2255
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£492.00
(exc. VAT)
£591.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 08 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.164 | £492.00 |
*price indicative
- RS Stock No.:
- 170-2255
- Mfr. Part No.:
- BFP840FESDH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 85GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 1.4mm | |
| Height | 0.55mm | |
| Width | 0.8 mm | |
| Series | BFP840FESD | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 85GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 1.4mm | ||
Height 0.55mm | ||
Width 0.8 mm | ||
Series BFP840FESD | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.
Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
Related links
- Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V, 4-Pin TSFP
- Infineon BFP840ESDH6327XTSA1 NPN RF Bipolar Transistor 2.25 V SOT-343
- Infineon BFR840L3RHESDE6327XTSA1 NPN RF Bipolar Transistor 2.25 V TSLP-3-9
- Infineon BFR360FH6765XTSA1 NPN RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1
- Infineon BFR360FH6327XTSA1 NPN RF Bipolar Transistor 6 V, 3-Pin TSFP
- Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor 4 V, 4-Pin TSFP
- Infineon BFP620FH7764XTSA1 NPN RF Bipolar Transistor 7.5 V, 4-Pin TSFP-4-1
- Infineon BFP650FH6327XTSA1 NPN RF Bipolar Transistor 13 V, 4-Pin TSFP