Vishay E N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK SIHB21N80AE-GE3
- RS Stock No.:
- 210-4977
- Mfr. Part No.:
- SIHB21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£13.08
(exc. VAT)
£15.695
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,790 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.616 | £13.08 |
| 50 - 120 | £2.354 | £11.77 |
| 125 - 245 | £2.066 | £10.33 |
| 250 - 495 | £1.91 | £9.55 |
| 500 + | £1.648 | £8.24 |
*price indicative
- RS Stock No.:
- 210-4977
- Mfr. Part No.:
- SIHB21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | E | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.205 Ω | |
| Maximum Gate Threshold Voltage | 2 → 4V | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Series E | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.205 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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