Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
- RS Stock No.:
- 919-4198
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 2500 units)*
£1,005.00
(exc. VAT)
£1,205.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 2,500 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.402 | £1,005.00 |
*price indicative
- RS Stock No.:
- 919-4198
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 3.1 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 150 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.4 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 5mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 14.5 nC @ 10 V | |
Width | 4mm | |
Transistor Material | Si | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 14.5 nC @ 10 V | ||
Width 4mm | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW
Dual P-Channel MOSFET, Vishay Semiconductor
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