Vishay Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC SI4925DDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£742.50

(exc. VAT)

£890.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.297£742.50

*price indicative

RS Stock No.:
919-4202
Mfr. Part No.:
SI4925DDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



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