Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3

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Subtotal (1 pack of 5 units)*

£6.80

(exc. VAT)

£8.15

(inc. VAT)

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Last RS stock
  • Plus 25 unit(s) shipping from 03 November 2025
  • Plus 5 unit(s) shipping from 03 November 2025
  • Final 2,965 unit(s) shipping from 10 November 2025
Units
Per unit
Per Pack*
5 - 45£1.36£6.80
50 - 245£1.17£5.85
250 - 495£0.95£4.75
500 - 1245£0.79£3.95
1250 +£0.722£3.61

*price indicative

Packaging Options:
RS Stock No.:
787-9008
Mfr. Part No.:
SI4948BEY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Dual P-Channel MOSFET, Vishay Semiconductor



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