Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
- RS Stock No.:
- 787-9008
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
£1.78
(exc. VAT)
£2.135
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 30 unit(s) ready to ship
- Plus 5 left, ready to ship from another location
- Plus 4,215 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.356 | £1.78 |
*price indicative
- RS Stock No.:
- 787-9008
- Mfr. Part No.:
- SI4948BEY-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.1 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 14.5 nC @ 10 V | |
| Width | 4mm | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.1 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 14.5 nC @ 10 V | ||
Width 4mm | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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