Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3

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Subtotal (1 pack of 5 units)*

£6.88

(exc. VAT)

£8.255

(inc. VAT)

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Last RS stock
  • 20 left, ready to ship
  • Plus 5 left, ready to ship from another location
  • Final 2,965 unit(s) shipping from 04 December 2025
Units
Per unit
Per Pack*
5 - 45£1.376£6.88
50 - 245£1.184£5.92
250 - 495£0.962£4.81
500 - 1245£0.80£4.00
1250 +£0.73£3.65

*price indicative

Packaging Options:
RS Stock No.:
787-9008
Mfr. Part No.:
SI4948BEY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

4mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Dual P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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