Vishay Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£880.00

(exc. VAT)

£1,055.00

(inc. VAT)

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  • 2,500 unit(s) ready to ship
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Units
Per unit
Per Reel*
2500 +£0.352£880.00

*price indicative

RS Stock No.:
165-6282
Mfr. Part No.:
SI4909DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

4mm

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Number of Elements per Chip

2

Transistor Material

Si

Length

5mm

Height

1.55mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



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