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Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2

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RS Stock No.:
Mfr. Part No.:
UnitsPer unit
1 - 4£528.39
5 - 9£514.49
10 - 24£501.29
25 +£488.76

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Channel TypeN
Maximum Continuous Drain Current404 A
Maximum Drain Source Voltage1200 V
Package TypeHalf Bridge
Mounting TypePanel Mount
Pin Count7
Maximum Drain Source Resistance9.8 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage2.3V
Minimum Gate Threshold Voltage1.8V
Maximum Power Dissipation1.66 kW
Transistor ConfigurationSeries
Maximum Gate Source Voltage-10 V, +25 V
Number of Elements per Chip2
Typical Gate Charge @ Vgs1025 nC @ 20 V, 1025 nC @ 5 V
Forward Diode Voltage2.5V
Transistor MaterialSiC
Maximum Operating Temperature+150 °C