Infineon HEXFET N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK IRFR3411TRPBF
- RS Stock No.:
- 915-5014
- Mfr. Part No.:
- IRFR3411TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£15.56
(exc. VAT)
£18.68
(inc. VAT)
FREE delivery for orders over £50.00
- 1,080 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
20 - 20 | £0.778 | £15.56 |
40 - 80 | £0.739 | £14.78 |
100 - 180 | £0.708 | £14.16 |
200 - 480 | £0.661 | £13.22 |
500 + | £0.622 | £12.44 |
*price indicative
- RS Stock No.:
- 915-5014
- Mfr. Part No.:
- IRFR3411TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 32 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 44 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 130 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 7.49mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Height | 2.39mm | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 44 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 7.49mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Height 2.39mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF
Features & Benefits
• Maximum voltage rating of 100V for flexible usage
• Low RDS(on) of 44mΩ reduces power loss and heat generation
• Maximum power dissipation of 130W for enhanced durability
• Supports high-speed switching for improved circuit performance
• Surface mounting design simplifies PCB integration
Applications
• Effective for motor control circuits in robotics and automation
• Suitable for power management in telecommunications equipment
• Employed in electronic lighting systems for energy efficiency
What type of PCB mounting methods are compatible with this device?
Can this device handle pulsed drain currents?
What is the thermal resistance for this component?
What temperature range can it operate in?
How does the gate charge impact performance?
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