Infineon OptiMOS™ 3 N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220 IPP037N08N3GXKSA1
- RS Stock No.:
- 914-0182
- Mfr. Part No.:
- IPP037N08N3GXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£20.40
(exc. VAT)
£24.50
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- Plus 80 left, shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £2.04 | £20.40 |
| 50 - 90 | £1.938 | £19.38 |
| 100 - 240 | £1.877 | £18.77 |
| 250 - 490 | £1.734 | £17.34 |
| 500 + | £1.612 | £16.12 |
*price indicative
- RS Stock No.:
- 914-0182
- Mfr. Part No.:
- IPP037N08N3GXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 214 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 214 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 88 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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