onsemi SuperFET II N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F
- RS Stock No.:
- 865-1268P
- Mfr. Part No.:
- FCH041N60F
- Brand:
- onsemi
Subtotal 10 units (supplied in a tube)*
£57.50
(exc. VAT)
£69.00
(inc. VAT)
FREE delivery for orders over £50.00
- 450 left, ready to ship
Units | Per unit |
|---|---|
| 10 + | £5.75 |
*price indicative
- RS Stock No.:
- 865-1268P
- Mfr. Part No.:
- FCH041N60F
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 76 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | SuperFET II | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 41 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 595 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 277 nC @ 10 V | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 76 A | ||
Maximum Drain Source Voltage 600 V | ||
Series SuperFET II | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 41 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 595 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 4.82mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 277 nC @ 10 V | ||
Length 15.87mm | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
